Reliability of Semiconductor Devices
Oxide Semiconductor Devices: IGZO Thin Film Transistors
Development of Nano and Molecular Devices
Formation of Nano and Molecular Integrated Circuits using Nanolithography
DNA Nanotechnology
3D Printed Flexible Devices
학력
(Ph.D.) 전기 및 컴퓨터 공학, 휴스톤 대학교, USA (1994)
학술지 논문
(2023)
An Expandable Yield Prediction Framework Using Explainable Artificial Intelligence for Semiconductor Manufacturing.
APPLIED SCIENCES-BASEL.
13,
4
(2022)
Triple boron doped silicon for selective epitaxial growth of 3D NAND flash memory.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
80,
12
(2022)
Improving hole injection ability using a newly proposed WO3/NiOx bilayer in solution processed quantum dot light-emitting diodes.
CURRENT APPLIED PHYSICS.
38,
1
(2021)
The study on un-doped/boron doped/un-doped triple SEG in vertical NAND flash memory.
Journal of Metals, Materials and Minerals.
31,
4
(2020)
Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane).
APPLIED SCIENCES-BASEL.
10,
17
(2019)
Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY.
19,
10
(2018)
Methane and hydrogen sensing properties of catalytic combustion type single-chip micro gas sensors with two different Pt film thicknesses for heaters.
Micro and Nano Systems Letters.
6,
1
(2018)
Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors.
AIP ADVANCES.
8,
9
(2017)
Analysis of Hysteresis Observed in Multi-Layered MoS2 Field Effect Transistors.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY.
17,
10
(2016)
Off-state degradation with ac bias in PMOSFET.
MICROELECTRONICS RELIABILITY.
65,
(2016)
Roles of Residual Stress in Dynamic Refresh Failure of a Buried-Recessed-Channel-Array Transistor (B-CAT) in DRAM.
IEEE ELECTRON DEVICE LETTERS.
37,
7
(2016)
Ultra-low Doping on Two-Dimensional Transition Metal Dichalcogenides using DNA Nanostructure Doped by a Combination of Lanthanide and Metal Ions.
SCIENTIFIC REPORTS.
6,
(2015)
Asymmetrical formation of etching residues and their roles in inner-gate-recessed-channel-array-transistor.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B.
33,
2
(2014)
Effects of Controlling the Interface Trap Densities in InGaZnO Thin-film Transistors on Their Threshold Voltage Shifts.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
65,
11
(2014)
Assembling CdSe/ZnS core-shell quantum dots on localized DNA nanostructures.
RSC ADVANCES.
4,
95
(2014)
n- and p-Type doping phenomenon by artificial DNA and M-DNA on two-dimensional transition metal dichalcogenides.
ACS NANO.
8,
11
(2014)
Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics.
NANOSCALE.
6,
7
(2014)
FN-degradation of S-RCAT with different grain size and oxidation method.
MICROELECTRONIC ENGINEERING.
119,
5
(2014)
Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY.
64,
3
(2014)
Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics.
SOLID-STATE ELECTRONICS.
91,
1
단행본
(2004)
분자혁명과 준비된 미래.
한티미디어.
단독
특허/프로그램
발광다이오드용 발광층 및 이의 제조 방법
EMITTING LAYER FOR LIGHT EMITTING DIODE AND PREPARING METHOD OF THE SAME.
1020150179376.
20170622.
대한민국
그래핀의 패턴 형성 방법(GRAPHENE PATTERNING METHOD).
10-2014-0139696.
20141211.
대한민국
그래핀의 패턴 형성 방법(GRAPHENE PATTERNING METHOD).
10-2014-0139697.
20141211.
대한민국
그래핀의 패턴 형성 방법(GRAPHENE PATTERNING METHOD).
10-2013-0082292.
20141112.
대한민국
나노 소자의 형성방법(Methods for forming nano devices using nanostructures having self assembly characteristics).
10-1094738-0000.
20120109.
대한민국
나노 소자의 형성방법.
10-2008-0098992.
20110830.
대한민국
Methods of forming nano-devices using nanostructures having self-assembly characteristics.
12/330898.
20110712.
미국
기판 상에 나노구조체를 선택적으로 위치시키는 방법 및 이에 의해 형성된 나노구조체를 포함하는 나노-분
자 소자.
10-2009-0013339.
20110601.
대한민국
대전된 물질을 이용한 1 차원 또는 2 차원 전도성 나노선의 고집적 방법 및 그에 의한 전도성 집적 나노선.
10-2009-0061816.
20110412.
대한민국
액상증착 기술을 이용한 나노 구조체의 제조방법 및 그에 의해 제조된 나노구조체.
10-2008-0040401.
20101006.
대한민국
저온 액상 증착 기술을 이용한 실리콘산화물 절연막의 제조방법.
10-2008-0040404.
20100928.
대한민국
금 나노 선 제조방법 (Manufacturing Method for Au NANO Wire).
10-0813113-0000.
20080306.
대한민국
나노 와이어 형성방법 및 이 나노 와이어 형성방법을 통해 제조된 반도체장치.
10-0701024.
20070322.
대한민국
나노 홀 형성방법 및 이 나노 홀 형성방법을 통해 제조된 반도체장치.
10-0663892.
20061226.
대한민국
레지스트 애싱과 리프트-오프 방식을 이용한 나노규격 구조물 형성방법.
10-0588293-0000.
20060602.
대한민국
텅스텐 실리사이드 단층 게이트 구조를 갖는 모스 트랜지스터 및 그의 제조방법.
특허제364524호.
20021129.
대한민국
학술회의논문
(2018)
Characteristic analysis on ZnO / PEDOT: PSS Charge Generation Junctions for Improvement of Hole Injection ability in QLEDs.
The 18th International Meeting on Information Display (IMID).
대한민국
(2018)
Quantum dot based light emitting diodes with graphene Schottky barrier control.
The 18th International Meeting on Information Display (IMID).
대한민국
(2018)
A study on the Effect of ZnO Nanoparticles size on the Charge Balance of QLEDs.
The 18th International Meeting on Information Display (IMID).
대한민국
(2018)
Enhanced charge balance of quantum dot light-emitting diodes by introducing TPBi/ZnO Electron transport layer.
NANO KOREA 2018.
대한민국
(2018)
하이드라진 도핑된 그래핀 소자의 외부환경에 따른 열화현상 분석연구.
제 54회 한국진공학회 논문집.
대한민국
(2017)
Impact of hot carrier (HC) induced fowler-nordheim (FN) degradation behavior at NMOSFET in dram.
MNE2017.
포르투갈
(2017)
Performance improvement of QDLEDs by introducing the TPBi/ZnO ETL.
iMiD2017.
대한민국
(2017)
Electrical Characteristics Improvement of NAND Flash Memory on Experiment to Replace 49BF2+ with 11B+ in Implantation of Ions.
ECS.
미국
(2017)
Mechanisms of Hysteresis Generation in Multi-Layered MoS2 Field Effect Transistor.
ECS.
미국
(2017)
Improving on-state breakdown voltage and double hump substrate current of HV NMOS.
EUROSOI-ULIS 2017.
그리스
(2017)
보호막 형성 조건에 따른 graphene의 전기적 특성변화.
50회 한국진공학회논문집.
대한민국
(2017)
Application of Polyvinyl Alcoho (PVA) Coating on Doped Graphene for Long-Term Stability.
The 4th Muju International Winter School Series.
대한민국
(2017)
Performance imprevement of QDLEDs by Controlling the Size of ZnO Nanoparticles.
The 4th Muju International Winter School Series.
대한민국
(2017)
Roles of the Charge Balance on the Emission Profiles of CdSe/ZnS Quantum-Dot Light Emitting Diodes (QD LEDs).
The 4th Muju International Winter School Series.
대한민국
(2016)
Electrical characteristics of the IGZO-SiO2 interface in IGZO thin-film.
20th INTERNATIONAL VACUUM CONGRESS (IVC-20).
대한민국
(2016)
A Study of PMOSFET Device with Recessed-Silicon SiGe channel Process Application.
42nd International Conference on Micro and Nano Engineering.
오스트리아
(2016)
Empirical analysis of hysteresis observed in multi-layerd MoS2 field.
20th INTERNATIONAL VACUUM CONGRESS (IVC-20).
대한민국
(2016)
High performance CdSe/ZnS quantum-dot light-emitting device.
20th INTERNATIONAL VACUUM CONGRESS (IVC-20).
미국
(2016)
Degradation in Pmosfet during Off-State Stress.
229th Electro Chemistry Society Meeting.
미국
(2016)
Impact of open density of double patterning on gate profile control in Cl2-based plasma etching.
SPPT2016.
칠레
발전기금
