Next Generation Low-power Device Research; - Multi-valued Logic Devices (NDR/NDT-based MVL Devices/Circuits Integration) - Neuromorphic Devices (Synaptic/Neuronal Devices and 3D Integration) - Novel Devices for Process-In-Memory
2D Materials-based Research; - 2D Semiconductor Fabrication Technologies (Doping, Contact, and etc.) - 2D Semiconductor Applications (Photodetectors and Transistors)
학력
(Ph.D.) in Electrical Engineering, Stanford University, CA, USA. (2009)
(M.S.) in Electrical Engineering, Stanford University, CA, USA. (2006)
(B.S.) in Electrical Engineering, Sungkyunkwan University (SKKU), Korea. (2004)
약력/경력
Professor (SKKU Fellow in 2024), Sungkyunkwan University (2021-Present)
Advisory Professor, Samsung Electronics Future Technology Council (2022-Present)
Editorial Board Member, Nanoscale Horizons, Royal Society of Chemistry (2023-Present)
Associate Professor (Early-tenured in 2017 & SKKU Young-Fellow in 2019), Sungkyunkwan University (2016-2021)
Visiting Professor, Stanford University, CA, USA. (2017-2018)
Assistant Professor, Sungkyunkwan University (2011-2016)
Assistant Professor, Kyunghee University, Korea. (2010-2011)
Postdoctoral Scientist, IBM T. J. Watson Research Center, NY, USA. (2009-2010)
학술지 논문
(2025)
Timing-Dependent Spiking Neural Network: Board-Level Hardware Implementation with Photoelectroactive Van der Waals Synapses.
ADVANCED MATERIALS.
38,
23
(2025)
Highly Tunable Synaptic Modulation in Photo-Activated Remote Charge Trap Memory for Hardware-Based Fault-Tolerant Learning.
ADVANCED MATERIALS.
38,
3
(2025)
Crack-Free Transfer of Wafer-Scale Freestanding Single-Crystalline Nanomembranes Enabled by Elastically Graded Polymer.
ADVANCED MATERIALS.
38,
1
(2025)
Artificial Optoelectronic Synapse Featuring Bidirectional Post-Synaptic Current for Compact and Energy-Efficient Neural Hardware.
ADVANCED MATERIALS.
37,
34
(2025)
Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems.
NATURE ELECTRONICS.
8,
6
(2025)
Post-Treatment of Monolayer MoS2 Field-Effect Transistors with H2O Vapor: Alleviation of Remote Channel Doping.
ACS APPLIED MATERIALS & INTERFACES.
17,
3
(2024)
Growth-based monolithic 3D integration of single-crystal 2D semiconductors.
NATURE.
636,
8043
(2024)
Electron-Beam-Induced Negative Differential Transconductance Homojunction Device Based on van der Waals Materials for Functionally Complete Ternary Computing.
ACS NANO.
18,
52
(2024)
Opposite synaptic plasticity in oxidation-layer-controlled 2D materials-based memristors for mimicking heterosynaptic plasticity.
NANO TODAY.
59,
(2024)
Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors.
NANOSCALE HORIZONS.
9,
9
(2023)
Tactile Neuromorphic System: Convergence of Triboelectric Polymer Sensor and Ferroelectric Polymer Synapse.
ACS NANO.
17,
17
(2022)
Non-epitaxial single-crystal 2D material growth by geometrical confinement.
NATURE.
특허/프로그램
Semiconductor devices.
US20230290870A1.
20251125.
미국
Super-steep switching device and inverter device using the same.
US20240096888A1.
20251125.
미국
양방향 전류를 갖는 인공 시냅스 소자 및 이의 제조 방법과 동작 방법.
10-2024-0145466.
20251125.
대한민국
Photodetector and image sensor including the same.
US20220384500A1.
20250218.
미국
SEMICONDUCTOR DEVICE WITH Publication Classification MULTIPLE ZERO DIFFERENTIAL TRANSCONDUCTANCE AND METHOD OF MANUFACTURING SAME.
US20220223630A1.
20250204.
미국
Negative differential resistance device.
US20240079496A1.
20250121.
미국
맥신 시냅스 장치.
10-2024-0068351.
20241107.
대한민국
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF.
US 2022/0271057 A1 .
20241015.
미국
고집적 및 저전력화를 위한 아날로그 디지털 변환기 및 이를 이용한 아날로그 신호의 디지털
변환 방법.
10-2022-0068196.
20240731.
대한민국
트랜지스터 및 이의 제조방법.
10-2022-0128345.
20240329.
대한민국
NEURON DEVICE USING SPONTANEOUS POLARIZATION SWITCHING PRINCIPLE.
US 2020/0342300 A1.
20240305.
미국
NEGATIVE DIFFERENTIAL RESISTANCE
DEVICE.
US 2022/0093803A1.
20230606.
미국
TANDEM SOLAR CELLS HAVING A TOP OR BOTTOM METAL CHALCOGENIDE CELL.
US 2021/0359150A1 .
20230221.
미국
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF.
US20210005710A1.
20221101.
미국
NEGATIVE DIFFERENTIAL RESISTANCE Publication Classification
ELEMENT HAVING 3 - DIMENSION VERTICAL STRUCTURE.
US20200357988A1.
20220906.
미국
다중 영미분 전달전도 특성을 갖는 반도체 소자 및 그 제조 방법.
10-2021-0005577.
20220706.
대한민국
MULTI - NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE DEVICE AND METHOD OF PRODUCING THE SAME.
US20210111283A1.
20220510.
미국
인공 시냅스 소자 및 이의 제조방법 (Artificial synaptic device and method for manufacturing the same).
10-2020-0119915.
20210907.
대한민국
반데르발스 힘을 이용한 박막 필름 전사 방법 (TRANSFER METHOD OF THIN FILMS USING VAN DER WAALS FORCE).
10-2018-0121014.
20210512.
대한민국
부성미분저항 소자 제조방법.
10-2019-0113760.
20210325.
대한민국
수상/공훈
SKKU Fellowship (성균관대학교 펠로우쉽), 2024
Nanoscale Horizons 2021 Outstanding Paper Award (2021 우수논문상), 2022
SKKU Young-Fellowship (성균관대학교 영펠로우쉽), 2019
Young Scientist Award of Graphene Research Society of Korea (한국그래핀연구회/ 제5회 그래핀/2D소재심포지엄 신진학술상), 2018
Science/Technology Award of This Month by National Research Foundation of Korea (한국연구재단 이달의과학기술인상), 2017
LG Yonam Foundation Overseas Research Professor Fellowship (LG 연암재단 해외연구교수), 2017-2018
Haedong Young Engineering Researcher Award by IEEE Korea (대한전자공학회 해동상 젊은공학인상), 2016
Abroad Graduate Study Fellowship by the Korea Science and Engineering Foundation National Scholarship Program (연구재단 국비유학장학생), 2004-2006
학술회의논문
(2025)
Direct growth of WSe2 via chemical vapor deposition for p-type field-effect transistors.
International Conference on Advanced Electromaterials.
대한민국
(2025)
P-type Photoelectroactive Doping Effect in Optical Synaptic Device Using Oxygen Plasma-Treated h-BN.
International Conference on Advanced Electromaterials.
대한민국
(2025)
Thermally Induced Synthesis of the Ternary Phase Ni3In2Se2 from Ni Contacted InSe Nanosheets.
한국진공학회 하계정기학술대회.
대한민국
(2025)
MoS2/WSe2-based p-n Heterojunction Photo Diode with h-BN passivation.
전기전자재료학회 하계학술대회.
대한민국
(2025)
Enhancing Electrical Performance of 2D Semiconductor WSe2-Metal Junctions for Sustainable Electronics through HCl Surface Modification.
P-type Photoelectroactive Doping Effect in Optical Synaptic Device Using Oxygen Plasma-Treated h-BN.
미국
(2025)
Development of Ferroelectric-semiconductor Heterostructure Devices for Neuromorphic Applications.
한국반도체학술대회.
대한민국
(2023)
BP-assisted formatin of vdW contact with MoS2.
AEFM 2023.
대한민국
(2023)
WSe2 FET with electron-beam-induced W-shaped I-V characteristic and its application to ternary NAND gate.
7th IEEE Electron Devices Technology and Manufacturing Conference.
대한민국
(2020)
MoSe2/ReS2 Vertical Heterostructures for High-efficiency Photovoltaics.
한국진공학회- 하계정기학술대회.
대한민국
(2020)
N-type Doping Technique using PPh3 based on TMDs.
한국진공학회- 하계정기학술대회.
대한민국
(2020)
Controllable photoacid diffusion using external electric field.
한국진공학회- 하계정기학술대회.
대한민국
(2020)
Artificial VdW Synapse based on WS2 for Brain-inspired Computing.
Nano Korea 2020.
대한민국
(2020)
High photovoltaic effect in vertical multilayer ReS2/MoSe2 heterostructures.
Nano Korea 2020.
대한민국
(2020)
Light-Induced Negative Differential Transconductance based on Partial Gate Technology.
Nano Korea 2020.
대한민국
(2019)
High-performance tunsten diselenide (WSe2)-based photodetector enhanced by HCl treatment.
The 11th International Conference on Advanced Materials and Devices.
대한민국
(2019)
Oxygen Plasma-based P-type Doping on Hafnium Disulfide.
The 11th International Conference on Advanced Materials and Devices.
대한민국
(2019)
Artificial Synapse based on 2D Van der Waals Heterostructure.
The 11th International Conference on Advanced Materials and Devices.
대한민국
(2019)
2D Material based Lateral Synaptic Device using Ion Gel Gating.
제57회 한국진공학회 하계.
대한민국
(2019)
Artificial Optic-Neural Synapse for Colored and Color-Mixed Pattern Recongnition.
제26회 한국반도체학술대회.
대한민국
(2019)
Artificial Synaptic Device based on Ferroelectric Polymer Capacitor.
제26회 한국반도체학술대회.
대한민국
