Device Reliability of Advanced CMOS Technologies
Flash Memory Technology
Characterization of MOS Capacitor, and MOSFET with I-V, Generation and Recombination lifetime, and C-f Dependence
Generation and Recombination Lifetime Measurement of Epi Wafers and Denuded Wafers
Gate Oxide Integrity (GOI) Characterization
Detection of Impurities (Fe, Cu ,Pt, Au, Cr ..etc) by DLTS
Silvaco Simulation for extracting spice model parameter
Display Device (OLED, Thin Film Device on Flexible/Glass Substrate)
Low Temperature Poly Silicon TFTs
학력
(Ph.D.) in Electrical Engineering, Arizona State University,
약력/경력
Device Engineer for LTPS Polysilicon TFTs, Samsung Display Institute Kiheung, S. Korea (2002 ~2007)
Research Associate under Dr. D.K Schroder in Electrical Engineering (1998-2001) at Arizona State Univ.
Intern at Shin-Etsu Handotai America Co., Ltd.(1999)
Instructional Aide for the subject of Analog Circuit Design (1998 ?1999) at Arizona State Univ.
학술지 논문
(2025)
Hydrogen and oxygen induced abnormal reliability degradation in flexible top-gate amorphous In-Ga-Zn-O thin-film transistors under negative bias thermal illumination stress.
MICROELECTRONICS JOURNAL.
166,
(2025)
High On/Off ratio and robust photo-stability by interstitial composition in a-IGTO/TiOx TFT.
APPLIED SURFACE SCIENCE.
709,
(2025)
Impact of lithium fluoride buffer layer on contact interface engineering in a–IGZO TFTs.
CURRENT APPLIED PHYSICS.
79,
(2025)
Threshold shift mechanism in fluorine-doped indium-gallium-zinc-oxide thin film transistors via defect analysis.
CURRENT APPLIED PHYSICS.
79,
(2025)
Approach to reducing oversaturated boron content in plate poly layer of DRAM.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
197,
(2025)
Trade-Off between Thermally Induced Crystallization and Oxide Integrity for DRAM Application.
ACS OMEGA.
10,
32
(2025)
RbNO3 Wet Chemical Treatment for Contact Engineering and Enhanced Performance of a-IGTO TFTs with Improved Stability.
ACS APPLIED MATERIALS & INTERFACES.
17,
32
(2025)
Impact of proton-beam irradiation on the electrical reliability and performance of LTPS and a-IGZO thin-film transistors.
SCIENTIFIC REPORTS.
15,
1
(2025)
Improvement of gate oxide breakdown through STI structure Modification in DRAM.
SOLID-STATE ELECTRONICS.
225,
(2024)
String-level compact modeling of erase operations in the body-floated vertical channel of 3D charge trapping flash memory.
MICROELECTRONICS JOURNAL.
153,
(2024)
Rapid ultrasensitive and specific BNP biosensor with LED readout.
BIOMEDICAL MICRODEVICES.
26,
3
(2024)
Suppression of Dislocations in DRAM STI Structure.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
71,
7
(2024)
Nanoscale-doped dual-channel for improved performance and reliability of Hf: IGTO / a-IGTO thin film transistor.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
176,
(2024)
Optimization of Pupil Fit Parameters for Contact Hole Pattern CD Difference Improvement.
INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING.
25,
4
(2024)
Facile diffusion of sulfur and fluorine into a-IGTO thin films for high-performance and reliability of transparent amorphous oxide semiconductor thin-film transistors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
169,
1
(2024)
Novel Dual Work Function Buried Channel Array Transistor Process Design for Sub-17 nm DRAM.
IEEE ACCESS.
12,
(2024)
Novel STI technology for enhancing reliability of High-k/Metal gate DRAM (June 2024).
IEEE ACCESS.
12,
(2023)
High-Density 3-D NAND Cell Array Design With Hybrid Bonding.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
70,
11
(2023)
Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
70,
10
(2023)
Performance and reliability enhancement of flexible low-temperature polycrystalline silicon thin-film transistors via activation-annealing temperature optimization.
THIN SOLID FILMS.
780,
단행본
(2009)
디스플레이 공학.
홍능과학 출판사.
단독
(2008)
LCD 제조공정과 장비.
내하출판사.
단독
(2008)
반도체소자분석.
텍스트북스.
공동
특허/프로그램
DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR.
US 8624298 B2.
20150107.
미국
ORGANIC ELECTROLUMINESCENT DISPLAY.
USOO8773406B2.
20140708.
미국
FLAT PANEL DISPLAY.
USOO8711074B2.
20140429.
미국
THIN FILM TRANSISTOR.
US 8,704,305 B2.
20140422.
미국
METHOD OF FABRICATING THIN FILM TRANSISTOR.
US 8652885B2.
20140218.
미국
Display Device including TFT.
0001004.
20140107.
미국
OLED Display and Fabrication.
001003.
20131203.
미국
OLED element and Method of Manufacturing the same.
0001001.
20131126.
미국
Photo sensor and OLED display using the same.
00100.
20130702.
미국
레이저 드릴링 가공홀 검사방법.
00010005.
20130618.
대한민국
플라즈마 증착 기술을 이용한 나노결정 실리콘막 구조체, 그의 형성방법, 나노결정 실리콘막 구조체를 구비하는 비휘발성 메모리 소자 및 그의 형성방법.
10-2008-0128318.
20120404.
대한민국
NANOCRYSTAL SILICON LAYER STRUCTURES FORMED USING PLASMA DEPOSITION TECHNIQUE METHODS OF FORMING THE SAME, NONVOLATILE MEMORY DEVICES HAVING THE NANOCRYSTAL SILICON LAYER STRUCTURES, AND METHODS OF FABRICATING THE NONVOLATILE MEMORY DEVICES.
12/388,846.
20120207.
미국
ORGANIC LIGHT-EMITTING DISPLAY DEVICE.
2007-683775.
20110920.
미국
THIN FILM TRANSISTOR, METHOD OF FORMING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME.
2009-388829.
20110920.
미국
THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME.
2007-760876.
20110906.
미국
플라즈마 증착 기술을 이용한 나노결정 실리콘만 구조체, 그의 형성방법, 나노결정 실리콘막 구조체를 구비하는 비휘발성 메모리 소자 및 그의 형성방법.
2008-0128316.
20110831.
대한민국
METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE HAVING PHOTO DIODE.
2008-098653.
20110712.
미국
Photo sensor and light emitting display having the same.
2008-222003.
20110712.
미국
Light emitting display device and method of fabricating the same.
2008-219262.
20110329.
미국
박막 트랜지스터, 그의 형성방법 및 박막 트랜지스터를 구비하는 평판 표시장치.
2008-0127918.
20110304.
대한민국
학술회의논문
(2019)
Capacitance-Voltage Characteristics of Solution-based HfZr-Silicate Gate Dielectrics.
The 26th International Display Workshops.
일본
(2019)
Effects of Annealing Gas on Electrical Properties of La2O3 Gate Dielectrics.
The 26th International Display Workshops.
일본
(2019)
Reduction of Oxide Defects in ZrO2/Al2O3/ZrO2 Dielectrics by Incorporating Hydrogen Peroxide.
The 26th International Display Workshops.
일본
(2018)
Double-Layered Indium-Zinc-Oxide Thin Film
Transistors with an Addition of Hydrogen Peroxide.
the 25th International Display Workshops.
일본
(2018)
Reduction of Charge Trapping in High-k HfZrO4 Gate Insulators.
The 25th International Display Workshops.
일본
(2017)
Investigation of Mixed Host Emission Layer for Improving Charge Balance of Green Phosphorescent OLEDs.
IFFM 2017.
대한민국
(2017)
Optimization of Double Channel Structure in Indium Zinc Oxide based Amorphous oxide semiconductors esing solution processes.
IFFM 2017.
대한민국
(2017)
The effect of Hydrogen Peroxide on Solution Processed Zirconium Oxide Dielectric.
IFFM 2017.
대한민국
(2016)
Analysis of Interface Traps in P-type Poly-Si TFT using Charge pumping method.
International Conference on Electronic Materials and Nanotechnology for Green Environment.
대한민국
(2016)
Body Effect Measurement in DRAM Cell Transistor using Memory Test system.
ISTFA 2016: Conference Proceedings.
미국
(2016)
Fabrication and Optimization of Hafnium Based materials for Gate Dielectric.
International Conference on Electronic Materials and Nanotechnology for Green Environment 2016.
대한민국
(2016)
Bias and Temperature Reliability of Amorphous Indium Tin Zinc Oxide Thin Film Transistor on SiO2, SiNx Gate Dielectric.
The 23rd International Display Workshops.
일본
(2015)
A study on the characteristics of Indium tin oxide by halogen electro-chemical treatment.
IFFM 2015.
대한민국
(2015)
Optimized Solution Processed ZrO2 Dielectric Layer for Thin-Film Transistors.
IFFM 2015.
대한민국
(2015)
Solution-Processed Dual-Active-Layer Oxide Thin Film Transistor to Improve Electrical Performance.
IFFM 2015.
대한민국
(2015)
Charge Trapping of Solution Processed ZrO2 Dielectric with
Bias-Temperature Stress.
The 5th International Symposium on Organic and Inorganic
Electronic Materials and Related Nanotechnologies.
일본
(2015)
Negative-Bias Temperature Instability Related with Gate Tunneling Mechanism.
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies.
일본
(2015)
Solution-Processed IGZO/ITZO Dual-Active-Layer Thin Film Transistor
for High mobility and Improvement of Bias Stability.
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies.
일본
(2015)
Temperature-Dependent Electrical Characteristics and Carrier Lifetime of Organic Light Emitting Diodes.
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies.
일본
(2014)
Analysis Method for characterization of the Weak Cells in DRAM Retention Time Distribution.
Micro and Nano Engineering.
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